PART |
Description |
Maker |
SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
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http:// Silicon Storage Technology, Inc.
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SST29EE512704IPHE SST29EE512 SST29EE512-70-4C-EH S |
512 Kbit (64K x8) Page-Write EEPROM
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SST[Silicon Storage Technology, Inc]
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AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection From old datasheet system 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28 64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
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ATMEL[ATMEL Corporation] Atmel, Corp.
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EN29LV512 |
512 Kbit (64K x 8-bit ) Uniform Sector
|
Eon Silicon Solution
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M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns NND - NMOS 512 KBIT (64KB X8) UV EPROM NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储 NMOS 512K 64K x 8 UV EPROM
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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AT28BV64B06 AT28BV64B-20TU AT28BV64B-20JU AT28BV64 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
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ATMEL Corporation
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SLA24C04-D/P SLA24C04-S/P SLA24C04-S-3/P SLE24C04- |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode 4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus/ Page Protection Mode
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SIEMENS AG Siemens Semiconductor Group
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UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
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EEPROM NIC Components, Corp. PLX Technology, Inc.
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M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8)紫外线存储器和OTP存储 SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储 512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8)紫外线存储器和OTP存储 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储 SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储 CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20 CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED Fuses, 100mA 250V SB 5X15 BULK CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85 CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2 CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 8200UF 450V ELECT SCREW TERM GLASS TUBE FOR DS80 IRON PKG/4 SERV SWITCH USB COAX CPU CABLES 50 FT SERV SWITCH USB COAX CPU CABLES 35 FT 512 KBIT (64KB X8) UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDIP28 64K X 8 OTPROM, 100 ns, PDSO28 64K X 8 OTPROM, 150 ns, PQCC32 64K X 8 OTPROM, 120 ns, PDIP28 64K X 8 OTPROM, 120 ns, PQCC32 64K X 8 OTPROM, 200 ns, PQCC32
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM 4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
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STMicroelectronics http://
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M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
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STMicroelectronics
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